Overview & Specs
HMCG78MEBUA084N 2x16GB DDR5-4800
Description SK hynix Unbuffered DDR5 SDRAM DIMMs (Unbuffered Double Data Rate Synchronous DRAM Dual In-Line Memory Modules are low-power, high-speed operation memory modules that use DDR5 SDRAM devices. These Unbuffered SDRAM DIMMs are intended for use as main memory when installed in systems such as PCs and workstations.
Features • DRAM VDD/VDDQ = 1.1V (-33mV / +66mV) • DRAM VPP = 2.5V (–125mV / +250mV) • 32 Bank with x4/x8 • 16 Bank with x16 • 8 BG(Bank Group) for X4/X8/X16 configurations • BL16, BC8 OTF, BL32, BL32 OTF supported • Temperature Encoding • Same Bank Refresh • VrefDQ / VrefCA / VrefCS Training • Hard/Soft Post Package Repair • Input Clock Frequency Change • Maximum Power Saving Mode (MPSM) • Multi-Purpose Command (MPC) • Per DRAM Addressability (PDA) • Read Training Mode • CA Training Mode • CS Training Mode • Per Pin VREFDQ Training • Write Leveling Training Mode • Connectivity Test (CT) • ZQ Calibration • DFE (Decision Feedback Equalization) for DQ • DQS Interval Oscillator • 1N / 2N Mode support for Commands • On-Die ECC • ECC Transparency and Error Scrub • CRC (Cyclic Redundancy Check) • Loopback for multiple purposes - monitor data, BER(Bit Error Rate) analysis, etc. • Package Output Driver Test Mode • Training Modes: · VrefDQ / VrefCA / VrefCS Training · Read Training Mode · CA Training Mode · CS Training Mode · Per Pin VREFDQ Training · Write Leveling Training Mode · Duty Cycle Adjuster (DCA) for Read - Global · Per Pin DCA(Duty Cycle Adjuster) for Read - Per Pin(DQ)
Shipping & Returns
SK Hynix 2x16GB DDR5-4800 SDRAM U-DIMM
Overview & Specs
HMCG78MEBUA084N 2x16GB DDR5-4800
Description SK hynix Unbuffered DDR5 SDRAM DIMMs (Unbuffered Double Data Rate Synchronous DRAM Dual In-Line Memory Modules are low-power, high-speed operation memory modules that use DDR5 SDRAM devices. These Unbuffered SDRAM DIMMs are intended for use as main memory when installed in systems such as PCs and workstations.
Features • DRAM VDD/VDDQ = 1.1V (-33mV / +66mV) • DRAM VPP = 2.5V (–125mV / +250mV) • 32 Bank with x4/x8 • 16 Bank with x16 • 8 BG(Bank Group) for X4/X8/X16 configurations • BL16, BC8 OTF, BL32, BL32 OTF supported • Temperature Encoding • Same Bank Refresh • VrefDQ / VrefCA / VrefCS Training • Hard/Soft Post Package Repair • Input Clock Frequency Change • Maximum Power Saving Mode (MPSM) • Multi-Purpose Command (MPC) • Per DRAM Addressability (PDA) • Read Training Mode • CA Training Mode • CS Training Mode • Per Pin VREFDQ Training • Write Leveling Training Mode • Connectivity Test (CT) • ZQ Calibration • DFE (Decision Feedback Equalization) for DQ • DQS Interval Oscillator • 1N / 2N Mode support for Commands • On-Die ECC • ECC Transparency and Error Scrub • CRC (Cyclic Redundancy Check) • Loopback for multiple purposes - monitor data, BER(Bit Error Rate) analysis, etc. • Package Output Driver Test Mode • Training Modes: · VrefDQ / VrefCA / VrefCS Training · Read Training Mode · CA Training Mode · CS Training Mode · Per Pin VREFDQ Training · Write Leveling Training Mode · Duty Cycle Adjuster (DCA) for Read - Global · Per Pin DCA(Duty Cycle Adjuster) for Read - Per Pin(DQ)